BFP405F datasheet(1/7 Pages) INFINEON

Part #	BFP405F

Description	NPN Silicon RF Transistor

PDF	7 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2007-04-20

BFP405F

1

2

4

3

NPN Silicon RF Transistor*

• For low current applications

• Smallest Package 1.4 x 0.8 x 0.59 mm

• Noise figure F = 1.25 dB at 1.8 GHz

outstanding Gms = 23 dB at 1.8 GHz

• Transition frequency f

T = 25 GHz

• Gold metallization for high reliability

• SIEGET  25 GHz fT - Line

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP405F

ALs

1=B

2=E

3=C

4=E

-

TSFP-4

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

TA > 0 °C

TA ≤ 0 °C

VCEO

4.5

4.1

V

Collector-emitter voltage

VCES

15

Collector-base voltage

VCBO

15

Emitter-base voltage

VEBO

1.5

Collector current

IC

12

mA

Base current

IB

1

Total power dissipation2)

TS ≤ 122 °C

Ptot

55

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

1Pb-containing package may be available upon special request

2TS is measured on the collector lead at the soldering point to the pcb

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