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BFP450 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BFP450 Datasheet(HTML) 7 Page - Infineon Technologies AG |
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7 / 27 page ![]() 1 2 3 4 Product Name Package Pin Configuration Marking BFP450 SOT343 1 = B 2 = E 3 = C 4 = E ANs High Linearity Low Noise Si NPN RF Transistor BFP450 Data Sheet 7 Revision 1.0, 2010-10-22 1 Features • Highly linear low noise driver amplifier for all RF frontends up to 2.5 GHz • Output compression point OP 1dB = 18.5 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system • Output 3rd order intermodulation point OIP 3 = 31 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system • Maximum available gain G ma = 15.5 dB at 50 mA, 3 V, 1.9 GHz • Minimum noise figure NF min = 1.7 dB at 50 mA, 3 V, 1.9 GHz • Based on Infineon´s reliable, high volume 25 GHz SIEGET™ line • Easy to use Pb-free (RoHS compliant) standard package with visible leads • Qualified according AEC Q101 Application Examples Driver amplifier • ISM bands 434 and 868 MHz • 1.9 GHz cordless phones • CATV LNA Transmitter driver amplifier • 2.4 GHz WLAN and Bluetooth Output stage LNA for active antennas • TV, GPS, SDARS, 2.4 GHz WLAN, etc Suitable for 3 - 5.5 GHz oscillators Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions |
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