2010-08-16

BFP520

1

2

3

4

NPN Silicon RF Transistor

• Low noise amplifier designed for low voltage

applications, ideal for 1.2 V or 1.8 V supply

collector resistance.

• High gain and low noise at high frequencies

• Finds usage e.g. in cordless phones and

satellite receivers

• Pb-free (RoHS compliant) standard package

with visible leads

• Qualified according AEC Q101

ESD

(Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP520

APs

1=B

2=E

3=C

4=E

-

-

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

2.5

2.4

V

Collector-emitter voltage

10

Collector-base voltage

10

Emitter-base voltage

1

Collector current

40

mA

Base current

4

100

mW

Junction temperature

150

°C

Storage temperature

-55 ... 150