2007-05-31

BFP640F

1

1

2

4

3

NPN Silicon Germanium RF Transistor*

• High gain low noise RF transistor

• Provides outstanding performance

for a wide range of wireless applications

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.65 dB at 1.8 GHz

Outstanding noise figure F = 1.2 dB at 6 GHz

• High maximum stable gain

• Gold metallization for extra high reliability

• Qualified according AEC Q101

* Short term description

1

3

4

2

Direction of Unreeling

Top View

XYs

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP640F

R4s

1=B

2=E

3=C

4=E

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TSFP-4