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BFP740 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFP740 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 10 page ![]() 2009-12-04 BFP740 1 1 2 3 4 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.85 dB at 6 GHz • High maximum stable gain Gms = 27 dB at 1.8 GHz • Gold metallization for extra high reliability • 150 GHz fT-Silicon Germanium technology • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP740 R7s 1=B 2=E 3=C 4=E - - SOT343 1Pb-containing package may be available upon special request |
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