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SPT6693 Datasheet(PDF) 2 Page - Solid States Devices, Inc

Part # SPT6693
Description  High Voltage ??High Energy NPN Transistor
PDF  3 Pages
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Manufacturer  SSDI [Solid States Devices, Inc]
Direct Link  http://www.ssdi-power.com
Logo SSDI - Solid States Devices, Inc

SPT6693 Datasheet(HTML) 2 Page - Solid States Devices, Inc

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NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0114A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPT6693
Electrical Characteristics
Symbol
Min
Max
Units
Collector – Emitter Blocking Voltage*
(IC = 200 mA)
BVCEO
400
––
Volts
Collector – Emitter Cutoff Current
(VCEX = 650 V, VEB = 1.5 V)
(VCEX = 400 V, VEB = 1.5 V)
(VCEX = 650 V, VEB = 1.5 V, TA = 125°C)
ICEX1
ICEX2
ICEX3
––
1
0.5
50
μA
Collector Cutoff Current
(VCE = 650 V)
ICBO
––
1
mA
Emitter Cutoff Current
(VEB = 8 V)
IEBO
––
2
mA
DC Current Gain*
(IC = 1 A, VCE = 3 V)
(IC = 15 A, VCE = 3 V)
(IC = 15 A, VCE = 3 V, TA = -55°C)
hFE
15
8
4
40
20
––
Collector – Emitter Saturation Voltage*
(IC = 15 A, IB = 3.0 A)
(IC = 15 A, IB = 3.0 A, TA = 125°C)
VCE (SAT)1
VCE (SAT)2
––
1.0
2.0
Volts
Base – Emitter Saturation Voltage*
(IC = 15 A, IB = 3.0 A)
VBE (SAT)
––
1.5
Volts
Current Gain – Bandwidth Product
VCE = 10 V, IC = 1 A, f = 5 MHz
fT
15
50
MHz
Output Capacitance
VCB = 10 V, IE = 0 A, f = 1.0MHz
Cob
150
500
pF
Delay Time
t(on)
td
––
100
ns
Rise Time
tr
––
600
ns
Storage Time
t(off)
ts
––
2.5
μs
Fall Time
tf
––
0.5
μs
Cross Over Time
tc
––
0.5
μs
Safe Operating Area, DC
SOA1
VCE = 11.7 V, IC = 15 A, 1 sec
SOA2
VCE = 25 V, IC = 7 A, 1 sec
SOA3
VCE = 100 V, IC = 0.25 A, 1 sec
SOA4
VCE = 400 V, IC = 10 mA, 1 sec
Safe Operating Area, clamped switching
VCC = 15 V, VBB2 = 5 V, RBB1 = 5 Ω, RBB2 = 1.5Ω, L = 50µH, Vclamp = 450V, IC = 15 A



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