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BSO613SPVG Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BSO613SPVG
Description  SIPMOS Power-Transistor
PDF  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSO613SPVG Datasheet(HTML) 1 Page - Infineon Technologies AG

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2007-03-02
Rev.1.3
Page 1
BSO613SPV G
SIPMOS® Power-Transistor
Features
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
Product Summary
Drain source voltage
VDS
-60
V
Drain-source on-state resistance
0.13
W
RDS(on)
Continuous drain current
A
ID
-3.44
SIS00062
G
45
D
S
36
D
S
27
D
S
18
Top View
D
Type
Package
Lead free
BSO613SPV G
PG-SO 8
Yes
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
TA = 25 °C
ID
-3.44
A
Pulsed drain current
TA = 25 °C
ID puls
-13.8
Avalanche energy, single pulse
ID = -3.44 A , VDD = -25 V, RGS = 25 W
EAS
150
mJ
0.25
EAR
Avalanche energy, periodic limited by
Tjmax
Reverse diode d
v/dt
IS = -3.44 A, VDS = -48 V, di/dt = 200 A/µs,
Tjmax = 150 °C
d
v/dt
6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
TA = 25 °C
Ptot
2.5
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56


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