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BSP321P Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSP321P Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 9 page ![]() BSP321P Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 240 319 pF Output capacitance C oss -62 82 Reverse transfer capacitance C rss -28 42 Turn-on delay time t d(on) - 5.9 8.8 ns Rise time t r - 4.4 6.6 Turn-off delay time t d(off) - 16.5 24.7 Fall time t f - 8.5 12.7 Gate Charge Characteristics 2) Gate to source charge Q gs - 1.1 1.4 nC Gate to drain charge Q gd -4 6 Gate charge total Q g -9 12 Gate plateau voltage V plateau - 4.5 - V Reverse Diode Diode continuous forward current I S - - -0.98 A Diode pulse current I S,pulse - - -3.9 Diode forward voltage V SD V GS=0 V, I F=0.98 A, T j=25 °C - 0.84 1.2 V Reverse recovery time t rr -47- ns Reverse recovery charge Q rr -96- nC 2) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-50 V, V GS=- 10 V, I D=-0.98 A, R G=6 Ω V DD=-80 V, I D=- 0.98 A, V GS=0 to -10 V V R=50 V, I F=|I S|, di F/dt =100 A/µs Rev 1.04 page 3 2011-04-05 |
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