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SVC201SPA Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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SVC201SPA Datasheet(HTML) 1 Page - Sanyo Semicon Device |
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1 / 4 page ![]() 33098HA (KT)/5119MO/1309TA/4013KI, TS No.501-1/4 SVC201SPA, 201Y Ordering number :EN501H Varactor Diode (IOCAP) for FM Receiver Electronic Tuning SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Duffused Junctions Type Sillicon Diode r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V n w o d k a e r BV R ) R B ( IR A µ 0 1 – =6 1 –V t n e r r u C e s r e v e RIR VR V 9 – = 0 5 –A n e c n a t i c a p a C l a n i m r e t r e t n I C V 6 . 1 VR z H M 1 = f , V 6 . 1 – =9 1 . 8 25 4 . 7 3F p C V 5 . 3 VR z H M 1 = f , V 5 . 3 – =4 0 . 9 13 3 . 4 2F p C V 0 . 5 VR z H M 1 = f , V 0 . 5 – =8 4 . 4 19 4 . 8 1F p C V 5 . 7 VR z H M 1 = f , V 5 . 7 – =7 1 . 0 19 9 . 2 1F p o t i a R e c n a t i c a p a CR CC V 6 . 1 C / V 5 . 7 2 . 27 . 3 e c n a t s i s e R s e i r e Srs V , z H M 0 5 = f R V 1 – =6 . 0 Ω e c n a r e l o T g n i h c t a M ∆Cm C ( x a m C – n i m C / ) n i m 5 0 . 0 r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e v i t i t e p e RVR 6 1 –V e r u t a r e p m e T n o i t c n u Jj T 0 0 1 e r u t a r e p m e T e g a r o t Sg t s T 0 0 1 + o t 5 5 – Package Dimensions unit:mm 1184 [SVC201SPA] C:Cathode A:Anode SANYO:SPA Features · The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implan- tation technology. It is intended for use in FM receiver electronic tuning applications. · Capable of being operated from a low voltage (Voltage range:1 to 9V) · High Q · High Capacitance raito · Uniform capacistance-voltage characteristic provided diode to be used in combination. unit:mm 1010A [SVC201Y] Specifications Absolute Maximum Ratings at Ta = 25˚C Electrical Characteristics at Ta = 25˚C ˚C ˚C C:Cathode A:Anode |
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