SVC203CP

Ordering number : EN2195F

Varactor Diode for FM Low-Voltage

Electronic Tuning Use

Diffused Junction Type Silicon Diode

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

O0397GI/52595GI (KOTO)1200MO/O268MO/6187AT, TS 8-9952 No.2195-1/3

Features

• Dual type with a good linearity of C-V characteristic. Excels in large input characteristics.

• Small-sized package (CP) usable in ultrasmall-sized sets (surface mount type).

• Applicable to FM wide band due to high capacitance ratio (VR=1.5 to 9V).

unit

Reverse Voltage

VR

16

V

Junction Temperature

Tj

125

°C

Storage Temperature

Tstg

–55 to +125

°C

min

typ

max

unit

Breakdown Voltage

V(BR)R

IR=1µA

16

V

Reverse Current

IR

VR=10V

50

nA

Interterminal Capacitance*

C1.0V

VR=1.0V, f=1MHz

58.80

65.98

pF

C6.0V

VR=6.0V, f=1MHz

18.72

25.11

pF

C9.0V

VR=9.0V, f=1MHz

10.84

13.40

pF

Quality Factor

Q

VR=3.0V, f=1MHz

60

Capacitance Ratio

CR

C1.0V/C9.0V

4.6

Matching Tolerance

∆Cm

VR=1.0V

6.5

%

VR=6.0V

5.5

%

VR=9.0V

11.8

%

* : Capacitance value of one diode

Electrical Connection

Package Dimensions 1169A

(unit : mm)

(Cmax |Cmin)

Cmin

×100