SVC222

No.6514-1/3

Features

•

Guaranteed matching to 4.0% at VR=2V.

•

High Q.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Reverse Voltage

VR

16

V

Junction Temperature

Tj

125

°C

Storage Temperature

Tstg

−55 to +125

°C

Electrical Characteristics at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

min

max

Breakdown Voltage

V(BR)R

IR=10µA16

V

Reverse Current

IR

VR=10V

50

nA

Interterminal Capacitance

C2V

VR=2.0V, f=1MHzg

20.80

24.80

pF

C8V

VR=8.0V, f=1MHz

12.00

15.00

pF

Quality Factor

Q

VR=3.0V, f=100MHz

100

Capacitance Ratio

CR

C2.0V / C8.0V

1.65

1.75

Matching Tolerance

∆Cm

VR=2.0V, f=1MHz (Cmax − Cmin) / Cmin!100

4.0

%

Note : Matching Tolerance is valid for the devices in each taping reel.

g

: 1MHz signal : 20mVrms

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Package Dimensions

unit : mm

1184

4.0

0.4

0.5

0.4

12

2.2

0.4

2.6

3.0

3.8nom

1 : Anode

2 : Cathode

SANYO : SPA

[SVC222]

41000 GI (IM)

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Diffused Junction Silicon Diode

Ordering number : ENN6514

SVC222

Varactor Diode for

FM Receiver Electronic Tuning Use