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ESD1P0RFS Datasheet(PDF) 2 Page - Infineon Technologies AG |
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ESD1P0RFS Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 9 page ![]() 2 ESD1P0RF... Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit ESD contact discharge1) VESD 20 kV Peak pulse current (tp = 8 / 20 µs)2) Ipp 10 A Operating temperature range Top -55...150 °C Storage temperature Tstg -65...150 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Reverse working voltage3) VRWM - - 70 V Reverse current VR = 70 V IR - - 100 nA Forward clamping voltage2) IPP = 3 A, tp = 8/20 µs IPP = 10 A, tp = 8/20 µs VFC - - 4 12 7 15 V Line capacitance4) VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz, for Application example 4 CT - - 1 0.5 1.5 0.75 pF Series inductance (per diode) SOT323 SOT363 LS - - 1.4 1.6 - - nH 1VESD according to IEC61000-4-2, only valid in anti-parallel or rail-to-rail connection. Please refer to the application examples. 2Ipp according to IEC61000-4-5, only valid in anti-parallel or rail-to-rail connection. Please refer to the application examples. 3Only valid in rail-to-rail configuration VCC ≥ VRWM 4Total capacitance line to ground (2 diodes in parallel) |
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