SVC325

No.6649-1/3

Features

•

Miniaturization and high-integration of tuner sets

can be easily achieved due to the small package.

•

High capacitance ratio and high quality factor.

•

Surface mount type.

Electrical Connection

Specifications

Absolute Maximum Ratings at Tc=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Reverse Voltage

VR

16

V

Junction Temperature

Tj

125

°C

Storage Temperature

Tstg

--55 to +125

°C

Electrical Characteristics at Tc=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

min

max

Breakdown Voltage

V(BR)R

IR=10µA16

V

Reverse Current

IR

VR=9V

100

nA

C1.2V

VR=1.2V, f=1MHz*

388.1

459.1

pF

Interterminal Capacitance

C3.5V

VR=3.5V, f=1MHz

144.2

192.1

pF

C6.0V

VR=6.0V, f=1MHz

45.71

60.91

pF

C8.0V

VR=8.0V, f=1MHz

20.30

27.05

pF

Quality Factor

Q

VR=1.0V, f=1MHz

200

Capacitance Ratio

CR

C1.2V / C8.0V, f=1MHz

15.5

Marking : V2

Note)*1

1MHz signal : 20mVrms

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SVC325

Varactor Diode

Package Dimensions

unit : mm

1303

1 : NC

2 : Anode

3 : Cathode

SANYO : CPH3

0.05

1.9

1

2

3

2.9

0.15

0.4

[SVC325]

92500 GI IM

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NC

A

C

Ordering number : ENN6649

Diffused Junction Type Silicon Diode