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SVC351 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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SVC351 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
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1 / 3 page ![]() 71598HA (KT)/2179MO, TS No.2819-1/3 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number:EN2819D SVC351 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Electronic Tuning Use Specifications Absolute Maximum Ratings at Ta = 25˚C Electrical Characteristics at Ta = 25˚C Package Dimensions unit:mm 1194B [SVC351] Features · Execellent matching characteristics because of composite type. · The number of manufacturing processes can be reduced and automatic mounting is possible because of composite type. · High capacitance ratio and high quality factor. k n a RC V 1 ) F p ( K5 . 6 5 4 o t 0 . 8 2 4 L0 . 8 7 4 o t 5 . 7 4 4 M0 . 0 0 5 o t 5 . 8 6 4 *1 : 1MHz signal : 20 Vrms *2 : ∆Cm=(CDn-CD3)/CD3×100 * : The SVC 351 is classified by C1V as follows: Electrical Connection 1:Anode1 2:Cathode 3:Anode2 4:Cathode 5:Anode3 SANYO:SIP5 1:Anode1 2:Cathode 3:Anode2 4:Cathode 5:Anode3 SANYO:SIP5 ˚C ˚C r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s r e v e RVR 6 1V e r u t a r e p m e T n o i t c n u Jj T 5 2 1 e r u t a r e p m e T e g a r o t Sg t s T 5 2 1 + o t 5 5 – r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V n w o d k a e r BV R ) R B ( IR A µ 0 1 =6 1V ) e d o i d e n O ( t n e r r u C e s r e v e RIR VR V 9 = 0 0 1A n ) e g a r e v A ( e c n a t i c a p a C l a n i m r e t r e t n I C V 1 VR 1 * z H M 1 = f , V 1 =* 0 . 8 2 4* 0 . 0 0 5F p C V 6 VR z H M 1 = f , V 6 =0 . 8 40 . 5 6F p C V 8 VR z H M 1 = f , V 8 =5 . 0 20 . 7 2F p r o t c a F y t il a u QQ VR z H M 1 = f , V 1 =0 0 2 o i t a R e c n a t i c a p a CR CC V 1 C / V 8 z H M 1 = f ,5 . 6 15 . 3 2 e c n a r e l o T g n i h c t a M ∆ 2 * m CVR z H M 1 = f , V 8 o t 1 = 5 . 2 ±% |
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