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GM2321 Datasheet(PDF) 1 Page - Guilin Strong Micro-Electronics Co., Ltd.

Part # GM2321
Description  P-Channel Enhancement-Mode MOS FETs
PDF  3 Pages
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Manufacturer  GSME [Guilin Strong Micro-Electronics Co., Ltd.]
Direct Link  http://www.gsme.com.cn
Logo GSME - Guilin Strong Micro-Electronics Co., Ltd.

GM2321 Datasheet(HTML) 1 Page - Guilin Strong Micro-Electronics Co., Ltd.

  GM2321 Datasheet HTML 1Page - Guilin Strong Micro-Electronics Co., Ltd. GM2321 Datasheet HTML 2Page - Guilin Strong Micro-Electronics Co., Ltd. GM2321 Datasheet HTML 3Page - Guilin Strong Micro-Electronics Co., Ltd.  
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桂 林 斯 壯 微 電 子 有 限 責 任 公 司
Guilin
Guilin
Guilin
Guilin
Strong
Strong
Strong
Strong
Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GM2321
SOT-23 場效應晶體管(SOT-23 Field Effect Transistors)
P
P
P
P
-Channel
-Channel
-Channel
-Channel
Enhancement-Mode
Enhancement-Mode
Enhancement-Mode
Enhancement-Mode
MOS
MOS
MOS
MOS
FETs
FETs
FETs
FETs
P
P
P
P
沟道增强型 MOS
MOS
MOS
MOS
场效应管
■
MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM
RATINGS
RATINGS
RATINGS
RATINGS
最大額定值
■
DEVICE
DEVICE
DEVICE
DEVICE
MARKING
MARKING
MARKING
MARKING
打標
Characteristic
特性參數
Symbol
符號
Max
最大值
Unit
單位
Drain-Source Voltage
漏極-源極電壓
BVDSS
-20
V
Gate- Source Voltage
栅極-源極電壓
VGS
+10
V
Drain Current (continuous)
漏極電流-連續
ID
-2.8
A
Drain Current (pulsed)
漏極電流-脉冲
IDM
-10
A
Total Device Dissipation
總耗散功率
TA=25℃環境溫度爲 25℃
PD
550
mW
Junction 結溫
TJ
150
℃
Storage Temperature 儲存溫度
Tstg
-55to+150
℃
GM
GM
GM
GM
2321
2321
2321
2321
=
=
=
=
A1
A1
A1
A1


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