GMA93 datasheet(2/3 Pages) GSME

2 / 3 page

桂林斯壯微電子有限責任公司

Guilin

Strong

Micro-Electronics

Co.,Ltd.

GMA92 GMA93

■

ELECTRICAL

CHARACTERISTICS

電特性

=25

℃ unless

unless

otherwise

noted

如無特殊說明，溫度爲 25℃)))

)

１．FR-5=1.0×0.75×0.062in.

２．Alumina=0.4×0.3×0.024in.99.5%alumina.

３．Pulse Width<300us;Duty Cycle<2.0%.

Characteristic

特性參數

Symbol

符號

Min

最小值

Max

最大值

Unit

單位

Collector-Emitter Breakdown Voltage(3)

集電極-發射極擊穿電壓(Ic=-1.0mAdc,IB=0)

V(BR)CEO

GMA92

GMA93

-300

-200

—

Vdc

Collector-Base Breakdown Voltage

集電極-基極擊穿電壓(Ic=-100μAdc,IE=0)

V(BR)CBO

GMA92

GMA93

-300

-200

—

Vdc

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓(IE=-10μAdc,Ic=0)

V(BR)EBO

-5.0

—

Vdc

Emitter Cutoff Current 發射截止電流

(VEB=-3.0Vdc,Ic=0)

IEBO

-100

nAdc

Collector Cutoff Current 集電極截止電流

(VCB=-200Vdc,IE=0)

(VCB=-160Vdc,IE=0)

ICBO

GMA92

GMA93

—

-250

nAdc

DC Current Gain 直流電流增益

HFE

—

(Ic=-1.0mAdc,VCE=-10.0Vdc)

—

(Ic=-10mAdc,VCE=-10.0Vdc)

300

(Ic=-30mAdc,VCE=-10.0Vdc)

GMA92

GMA93

—

Collector-Emitter Saturation Voltage

集電極-發射極飽和壓降

(Ic=-20mAdc, IB=-2.0mAdc)

VCE(sat)

GMA92

GMA93

—

-0.5

Vdc

Base-Emitter Saturation Voltage

基極-發射極飽和壓降

(Ic=-20mAdc, IB=-2.0mAdc)

VBE(sat)

—

-0.9

Vdc

Current-Gain-Bandwidth Product

電流增益-帶寬乘積

(Ic=-10mAdc,VCE=-20Vdc,f=100MHz)

MHz

Collector-Base Capacitance 輸出電容

(VCB=-20.0Vdc, IE=0, f=1.0MHz)

Ccb

GMA92

GMA93

—

6.0

8.0

GMA93 Datasheet(PDF) 2 Page - Guilin Strong Micro-Electronics Co., Ltd.

GMA93 Datasheet(HTML) 2 Page - Guilin Strong Micro-Electronics Co., Ltd.

Html Pages

1 2 3

Datasheet Download

Link URL