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Prelim. 7/98

2N7002CSM

* Pulse width limited by maximum junction temperature.

N–CHANNEL

ENHANCEMENT MODE

MOS TRANSISTOR

FEATURES

Ω

Drain – Source Voltage

Gate – Source Voltage

Drain Current

Drain Current

Pulsed Drain Current *

Power Dissipation

Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

60V

±40V

±0.115A

±0.073A

0.8A

200mW

80mW

–55 to 150°C

–55 to 150°C

MECHANICAL DATA

Dimensions in mm (inches)

SOT23 CERAMIC

(LCC1 PACKAGE)

21

0.51 ± 0.10

(0.02 ± 0.004)

0.31

(0.012)

1.91 ± 0.10

(0.075 ± 0.004)

3.05 ± 0.13

(0.12 ± 0.005)

1.02 ± 0.10

(0.04 ± 0.004)

1.40

(0.055)

max.

A

0.31

(0.012)

rad.

rad.

A =

3

PAD 1 – Gate

Underside View

PAD 2 – Source

PAD 3 – Drain