2N7086 datasheet(2/2 Pages) SEME-LAB

2 / 2 page

Parameter

Min.

Typ.

Max.

Unit

RthJC

Thermal resistance Junction-Case

2.1

RthJA

Thermal resistance Junction-ambient

K/W

RthCS

Thermal resistance Junction-ambient

1.0

2N7086

Prelim. 1/99

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Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS = 0

ID = 250µA

VDS = VGS

ID = 250µA

VDS = 0

VGS = ±20V

VDS = 160V

VGS = 0

TJ = 125°C

VDS = 10V

VGS = 10V

ID = 8.5A

TJ = 125°C

VDS = 15V

IDS = 8.5A

VGS = 0

VDS = 25V

f = 1MHz

VDS = 0.5 x V(BR)DSS

VGS = 10V

ID = 14A

VDD = 100V

ID = 14A

VGEN =10V

RL = 7.1Ω

RG = 4.7Ω

IF = IS

VGS = 0

IF = IS

dIF/dt = 100A/µs

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

THERMAL RESISTANCECHARACTERISTICS

Drain–Source Breakdown Voltage

Gate Threshold Voltage

Gate – Body Leakage

Zero Gate Voltage Drain Current

On–State Drain Current1

Static Drain – Source On–State

Resistance 1

Forward Transconductance1

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge2

Gate Source Charge2

Gate Drain Charge2

Turn–On Delay Time2

Rise Time2

Turn–Off Delay Time2

Fall Time2

Continuous Current

Pulse Current 3

Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

200

±100

250

0.14

0.16

0.25

0.30

5.0

1550

500

220

4.6

100

114

2.0

150

650

0.5

µA

Ω

µC

BV(BR)DSS

VGS(th)

IGSS

IDSS

ID(on)

RDS(on)

gfs

Ciss

Coss

Crss

Qgs

Qgd

td(on)

td(off)

ISM

VSD

trr

Qrr

STATIC ELECTRICAL RATINGS

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

1Pulse test : Pulse Width < 300

µs ,Duty Cycle < 2%

2Independent of Operating Temperature

3Pulse width Limited by maximum Junction Temperature

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