2N7224

IRFM150

LAB

SEME

2/99

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Reference to 25°C

f = 1MHz

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn–On Time

100

0.13

0.070

0.081

2

4

9

25

250

100

–100

3700

1100

200

50

125

8

22

15

65

35

190

170

130

34

136

1.8

500

2.9

Negligible

8.7

8.7

V

V/ °C

W

V

W

mA

nA

pF

nC

nC

ns

A

V

ns

mC

nH

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width

£ 300ms, d £ 2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

PACKAGE CHARACTERISTICS