160MDS datasheet(2/3 Pages) NAINA

2 / 3 page

Naina Semiconductor Ltd.

160 MDS

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

• Fax: 0120-4273653

sales@nainasemi.com

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www.nainasemi.com

Electrical Specifications (TJ = 25

0C unless otherwise noted)

Parameters

Conditions

Symbol

Values

Units

Maximum DC output current

120

0 Rect conduction angle, T

C = 85

160

Maximum peak one-cycle forward,

non-repetitive surge current

t = 10ms

No voltage

reapplied

TJ = TJ max.

IFSM

1430

t = 8.3ms

1500

t = 8.3ms

100% VRRM

reapplied

1200

t = 10ms

1260

Maximum I

2t for fusing

T = 8.3ms

No voltage

reapplied

10200

T = 10ms

9300

T = 8.3ms

100% VRRM

reapplied

7200

T = 10ms

6600

Maximum J

2√t for fusing

T = 0.1 to 10ms, no voltage reapplied

2√t

102000

2√s

Low level value of threshold voltage

[ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max

VF(TO)1

0.81

High level value of threshold

voltage

[ I > π > IF(AV) ], @ TJ max

VF(TO)2

1.04

Low level value of forward slope

resistance

[ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max

3.52

mΩ

High level value of forward slope

resistance

[ I > π * IF(AV) ], @ TJ max

3.13

mΩ

Maximum forward voltage drop

Ipk = 100A, tP = 400 µs single junction

VFM

1.49

RMS isolation voltage

f = 50Hz, t = 1ms, all terminals shorted

VISO

4000

Diode Configuration

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