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2N4124 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2N4124 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page  2N4124 0.2 A, 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 29-Dec-2010 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current Gain High Transition Frequency ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.2 A Collector Power Dissipation PC 350 mW Thermal Resistance Junction to Ambient RθJA 357 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC= 0.01mA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=1mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE= 0.01mA, IC = 0A Collector Cut-Off Current ICBO - - 50 nA VCB= 20V, IE = 0 A Emitter Cut-Off Current IEBO - - 50 nA VEB= 3V, IC = 0 mA DC Current Gain hFE (1) 120 - 360 VCE= 1V, IC= 2 mA hFE (2) 60 - - VCE= 1V, IC=50mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.3 V IC=50mA, IB=5mA Base to Emitter Saturation Voltage VBE(sat) - - 0.95 V IC=50mA, IB=5mA Collector output Capacitance Cob - - 4 pF VCB = 5V, IE = 0A, f=1MHz Transition Frequency fT 300 - - MHz VCE = 20V, IC = 10mA, f=100MHz Emitter Base Collector TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 A C E K F D B G H J |
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