2N4402 datasheet(1/1 Pages) SECOS

Part #	2N4402

Description	PNP Plastic Encapsulated Transistor

PDF	1 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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2N4402

-0.6 A, -40 V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

29-Dec-2010 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.



Base



Emitter

Collector



RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



General Purpose Amplifier Transistor

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

-40

V

Collector to Emitter Voltage

VCEO

-40

V

Emitter to Base Voltage

VEBO

-5

V

Collector Current - Continuous

IC

-0.6

A

Collector Power Dissipation

PC

625

mW

Thermal resistance, junction to ambient

RθJA

200

°C / W

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test Condition

Collector to Base Breakdown Voltage

V(BR)CBO

-40

-

V

IC= 0.1mA, IE = 0A

Collector to Emitter Breakdown Voltage

V(BR)CEO *

-40

-

V

IC= -1mA, IB = 0A

Emitter to Base Breakdown Voltage

V(BR)EBO

-5

-

V

IE= -0.1mA, IC = 0A

Collector Cut-Off Current

ICBO

-

-0.1

μA

VCB= -40V, IE = 0 A

Emitter Cut-Off Current

IEBO

-

-0.1

μA

VEB= -4V, IC =0 mA

DC Current Gain

hFE *

30

-

VCE= -1V, IC= -1mA

50

-

VCE= -1V, IC= -10mA

50

-

150

VCE= -2V, IC= -150mA

20

-

VCE= -2V, IC= -500mA

Collector to Emitter Saturation Voltage

VCE(sat) *

-

-0.4

V

IC= -150mA, IB= -15mA

-

-0.75

IC= -500mA, IB= -50mA

Base to Emitter Saturation Voltage

VBE(sat) *

-0.75

-

-0.95

V

IC= -150mA, IB=-15mA

-

-1.3

IC= -500mA, IB= -50mA

Collector output Capacitance

Cob

-

8.5

pF

VCB = -10V, IE = 0A, f=1MHz

Emitter input Capacitance

Cib

-

30

pF

VEB = -0.5V, IC = 0A, f=1MHz

Transition Frequency

fT *

150

-

MHz

VCE = -10V, IC = -20mA, f=100MHz

*Pulse test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2.0%.



Emitter



Base



Collector

TO-92

REF.

Millimeter

Min.

Max.

A

4.40

4.70

B

4.30

4.70

C

12.70

-

D

3.30

3.81

E

0.36

0.56

F

0.36

0.51

G

1.27 TYP.

H

1.10

-

J

2.42

2.66

K

0.36

0.76

A

C

E

K

F

D

B

G

H

J

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