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2N5401 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2N5401 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente 2N5401 -0.6 A, -160 V PNP Plastic Encapsulated Transistor 4-Feb-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 2 Base 1 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Switching and amplification in high voltage Applications such as telephony Low current (max. 600mA) High voltage (max. 160V) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO -160 V Collector to Emitter Voltage VCEO -150 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.6 A Collector Power Dissipation PC 0.625 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Voltage V(BR)CBO -160 - - V IC=-100 µA, I E = 0A Collector to Emitter Breakdown Voltage V(BR)CEO -150 - - V IC=-1mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE=-10 µA, I C = 0A Collector Cut-Off Current ICBO - - -50 nA VCB=-120 V, IE = 0 A Emitter Cut-Off Current IEBO - - -50 nA VEB=-3 V, IC = 0 A hFE(1) 80 - - VCE=-5V, IC=-1mA hFE(2) 60 - 240 VCE=-5V, IC=-10mA DC Current Gain hFE(3) 50 - - VCE=-5V, IC=-50mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.5 V IC=-50mA, IB=-5mA Base to Emitter Saturation Voltage VBE(sat) - - -1 V IC=-50mA, IB=-5mA Transition Frequency fT 100 - 300 MHz VCE = -5V, IC = -10mA, f=30MHz TO-92 Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 A C E K F D B G H J |
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