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2N6517 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # 2N6517
Description  NPN Plastic Encapsulated Transistor
PDF  1 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2N6517 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  2N6517 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH  
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2N6517
0.5 A, 350V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
12-Jan-2011 Rev. A
Page 1 of 1
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.

Base

Emitter
Collector

A
C
E
K
F
D
B
G
H
J
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage Transistors
Complement of the 2N6520
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
350
V
Collector to Emitter Voltage
VCEO
350
V
Emitter to Base Voltage
VEBO
6
V
Collector Current - Continuous
IC
500
mA
Collector Power Dissipation
PC
0.625
W
Thermal resistance, Junction to ambient
RθJA
200
°C / W
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
350
-
-
V
IC=0.1mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
350
-
-
V
IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
-
V
IE=0.01mA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.05
μA
VCB=250V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.05
μA
VEB=5V, IC=0
DC Current Gain
hFE (1)*
20
-
-
VCE=10V, IC=1mA
hFE (2)*
30
-
-
VCE=10V, IC=10mA
hFE (3)*
30
-
200
VCE=10V, IC=30mA
hFE (4)*
20
-
200
VCE=10V, IC=50mA
hFE (5)*
15
-
-
VCE=10V, IC=100mA
Collector to Emitter Saturation Voltage
VCE(sat) *
-
-
0.3
V
IC=10mA, IB=1mA
-
-
1.0
IC=50mA, IB=5mA
Base to Emitter Saturation Voltage
VBE(sat) *
-
-
0.75
V
IC=10mA, IB=1mA
-
-
0.85
IC=20mA, IB=2mA
-
-
0.9
IC=30mA, IB=3mA
Base to Emitter Voltage
VBE *
-
-
2
V
VCE=10V, IC=100mA
Collector to Base Capacitance
Cob
-
-
6
pF
VCB=20V, IE=0A, f=1MHz
Transition Frequency
fT *
40
-
200
MHz
VCE=20V, IC=10mA, f=20MHz
*Pulse test:Pulse Width 300μ s, Duty Cycle 2.0
≦≦
Emitter
Base
Collector
TO-92
REF.
Millimeter
Min.
Max.
A
4.40
4.70
B
4.30
4.70
C
12.70
-
D
3.30
3.81
E
0.36
0.56
F
0.36
0.51
G
1.27 TYP.
H
1.10
-
J
2.42
2.66
K
0.36
0.76


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