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2N6520 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2N6520 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 02-Sep-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High voltage transistors ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO -350 V Collector to Emitter Voltage VCEO -350 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 0.625 W Thermal resistance, junction to ambient RθJA 200 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Voltage V(BR)CBO -350 - - V IC= -100μA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO * -350 - - V IC= -1mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -10μA, IC = 0A Collector Cut-Off Current ICBO - - -50 nA VCB= -250V, IE = 0 A Emitter Cut-Off Current IEBO - - -50 nA VEB= -4V, IC =0 mA DC Current Gain hFE * 20 - - VCE= -10V, IC= -1mA 30 - - VCE= -10V, IC= -10mA 30 - 200 VCE= -10V, IC= -30mA 20 - 200 VCE= -10V, IC= -50mA 15 - - VCE= -10V, IC= -100mA Collector to Emitter Saturation Voltage VCE(sat) * - - -0.3 V IC= -10mA, IB= -1mA - - -0.35 IC= -20mA, IB= -2mA - - -0.5 IC= -30mA, IB= -3mA - - -1.0 IC= -50mA, IB= -5mA Base to Emitter Saturation Voltage VBE(sat) * - - -0.75 V IC= -10mA, IB= -1mA - - -0.85 IC= -20mA, IB= -2mA - - -0.9 IC= -30mA, IB= -3mA Base to Emitter voltage VBE(on) * - - -2 V VCE= -10V, IC= -100mA Collector-Base Capacitance Ccb - - 6 pF VCB = -20V, IE = 0A, f=1MHz Emitter-Base Capacitance Ceb - - 80 pF VEB = -0.5V, IC = 0A, f=1MHz Transition Frequency fT * 40 - 200 MHz VCE = -20V, IC = -10mA, f=20MHz *Pulse test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2.0%. TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 A C E K F D B G H J |
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