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2SA844 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA844 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page  2SA844 -0.1A , -55V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 14-Feb-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current Gain Low Frequency Amplifier CLASSIFICATION OF hFE Product-Rank 2SA844-C 2SA844-D 2SA844-E Range 160~320 250~500 400~800 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -55 V Collector to Emitter Voltage VCEO -55 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -100 mA Collector Power Dissipation PC 300 mW Thermal Resistance From Junction to Ambient RθJA 416 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -55 - - V IC= -0.01mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -55 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -0.01mA, IC=0 Collector Cut-Off Current ICBO - - -0.1 μA VCB= -18V, IE=0 Emitter Cut-Off Current IEBO - - -0.05 μA VEB= -2V, IC=0 DC Current Gain hFE 160 - 800 VCE= -12V, IC= -2mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.5 V IC= -10mA, IB= -1mA Base to Emitter Voltage VBE - - -0.75 V VCE= -12V, IC= -2mA Transition Frequency fT - 200 - MHz VCE= -12V, IC= -2mA Collector Output Capacitance Cob - 2 - pF VCE= -10V, IC=0, f=1MHz TO-92 Emitter Collector Base REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 |
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