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2SA1832 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA1832 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  2SA1832 -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente 25-Jan-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector FEATURES High Voltage and High Current Excellent hFE Linearity Complementary to 2SC4738 CLASSIFICATION OF hFE PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -150 mA Collector Power Dissipation PC 100 mW Thermal Resistance Junction to Ambient RθJA 125 °C / W Junction and Storage Temperature TJ, TSTG -55~125 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO -50 - - V IC= -100A, IE=0 Collector to Emitter Breakdown V(BR)CEO -50 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -100A, IC=0 Collector Cut - off Current ICBO - - -100 nA VCB= -50V, IE=0 Emitter Cut - off Current IEBO - - -100 nA VEB= -5V, IC=0 DC Current Gain hFE 120 - 400 VCE= -6V, IC= -2mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.3 V IC= -100mA, IB= -10mA Transition Frequency fT 80 - - MHz VCE= -10V, IC= -1mA Collector Output Capacitance Cob - 4 7 pF VCB= -10V, IE=0, f=1MHz Product-Rank 2SA1832-Y 2SA1832-GR Range 120~240 200~400 Marking SY SG Package MPQ LeaderSize SOT-523 3K 7’ inch RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.5 1.7 G - 0.1 B 1.45 1.75 H 0.55 REF. C 0.75 0.85 J 0.1 0.2 D 0.7 0.9 K - E 0.9 1.1 L 0.5 TYP. F 0.15 0.25 M 0.25 0.325 Top View A L M C B D G H J F K E 1 2 3 1 2 3 |
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