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2SB561 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SB561 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page ![]() 2SB561 -0.7A , -25V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 14-Feb-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector A C E K F D B G H J RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Frequency Power Amplifier CLASSIFICATION OF hFE Product-Rank 2SB561-B 2SB561-C Range 85~170 120~240 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -25 V Collector to Emitter Voltage VCEO -20 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.7 A Collector Power Dissipation PC 0.5 W Thermal Resistance From Junction to Ambient RθJA 250 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -25 - - V IC= -0.01mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -20 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -0.01mA, IC=0 Collector Cut-Off Current ICBO - - -1 μA VCB= -20V, IE=0 Emitter Cut-Off Current IEBO - - -1 μA VEB= -5V, IC=0 DC Current Gain hFE * 85 - 240 VCE= -1V, IC= -0.15A Collector to Emitter Saturation Voltage VCE(sat) - - -0.5 V IC= -0.5A, IB= -0.05A Base to Emitter Voltage VBE - - -1 V VCE= -1V, IC= -0.15A Collector Output Capacitance Ccb - 20 - pF VCB = -10V, IE=0, f=1MHz Transition Frequency fT - 350 - MHz VCE = -1V, IC = -0.15A TO-92 Emitter Collector Base REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 |
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