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2SB764L Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SB764L Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Elektronische Bauelemente 2SB764L PNP Plastic Encapsulated Transistor 01-April-2009 Rev. A Page 1 of 3 3 Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● Power dissipation PCM: 0.9 W (Tamb=25℃) ● Collector current ICM: -1 A ● Collector-base voltage V(BR)CBO: -60 V ● Operating and storage junction temperature range TJ, TSTG: -55℃ to +150℃ PACKAGING INFORMATION Weight: 0.3900 g (Approximate) ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V(BR)CBO -60 - - V IC = -10 μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 - - V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 - - V IE = -10 μA, IC = 0 Collector Cut-off Current ICBO - - -1 μA VCB = -50V, IE = 0 Emitter Cut-off Current IEBO - - -1 μA VEB = -5V, IC = 0 hFE(1) 60 - 320 VCE = -2V, IC = -0.05A DC Current Gain hFE(2) 30 - - VCE = -2V, IC = -1A Collector-Emitter Saturation Voltage VCE(sat) - - -0.7 V IC = -0.5A, IB = -0.05A Base-Emitter Voltage VBE - - -1.2 V IC = -0.5A, IB = -0.05A Transition Frequency fT - 150 - MHz VCE = -10V, IC = -0.05A Collector Output Capacitance COB - 20 - pF VCB = -10V, IE = 0, f = 1 MHz CLASSIFICATION OF hFE(1) Rank D E F Range 60 - 120 100 - 200 160 - 320 1 Emitter 2 Collector 3 Base A C E F D B G H J K Millimeter REF. Min. Max. A 4.70 5.10 B 7.80 8.20 C 13.80 14.20 D 3.70 4.10 E 0.35 0.55 F 0.35 0.45 G 1.27 TYP. H 1.28 1.58 J 2.44 2.64 K 0.60 0.80 TO-92L |
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