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2SC1008 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC1008 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page  2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 14-Feb-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Switching and Amplification. CLASSIFICATION OF hFE Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G Range 40~80 70~140 120~240 200~400 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 80 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 8 V Collector Current - Continuous IC 0.7 A Collector Power Dissipation PC 800 mW Thermal Resistance From Junction to Ambient RθJA 156 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO 80 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 60 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 8 - - V IE=0.01mA, IC=0 Collector Cut-Off Current ICBO - - 0.1 μA VCB=60V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 μA VEB=5V, IC=0 DC Current Gain hFE 40 - 400 VCE=2V, IC=50mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.4 V IC=500mA, IB=50mA Base to Emitter Voltage VBE(sat) - - 1.1 V IC=500mA, IB=50mA Transition Frequency fT 30 - - MHz VCE=10V, IC=50mA Collector Output Capacitance Cob - 8 - pF VCB=10V, IC=0, f=1MHz TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Emitter Base Collector |
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