TLE7182EM datasheet(13/28 Pages) INFINEON

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Data Sheet

Rev 1.1, 2010-09-30

H-Bridge and Dual Half Bridge Driver IC

TLE7182EM

Description and Electrical Characteristics

MOSFET driver output

5.1.11

Output source resistance

Sou

2–

13.5

Load=-20mA

5.1.12

Output sink resistance

Sink

2–

9.0

Load=20mA

5.1.13

High level output voltage Gxx vs.

Sxx

Gxx1

–11

13.5V

≤V

VS≤34V;

Load=0mA

5.1.14

High level output voltage Gxx vs.

Sxx

Gxx2

–11

13.5

13.5V

≤V

VS≤34V;

Load=20nF;

D.C.=50%;

PWM=20kHz

5.1.15

High level output voltage GHx vs.

SHx1)

GHx3

–

VS-1.5 –

7.0V<V

VS<13.5V;

Load=20nF;

D.C.=50%;

PWM=20kHz

5.1.16

High level output voltage GLx vs.

GND1)

GLx3

–

VS-0.5 –

7.0V<V

VS<13.5V;

Load=20nF;

PWM=20kHz &

D.C.=50%;

or D.C=100%

5.1.17

High level output voltage GHx vs.

SHx1)2)

GHx4

5.0

diode

––V

VS=7.0V;

Load=20nF;

D.C.=95%;

PWM=20kHz;

passive

freewheeling

5.1.18

High level output voltage GHx vs.

SHx1)

GHx5

5.0

––V

VS=7.0V;

Load=20nF;

D.C.=95%;

PWM=20kHz

5.1.19

High level output voltage GLx vs.

SLx1)

GLx5

6.0

––V

VS=7.0V;

Load=20nF;

D.C.=95%;

PWM=20kHz

5.1.20

High level output voltage GHx vs.

SHx1)

GHx5

–

7.0V

≤V

VS≤13.5V;

Load=20nF;

D.C.=100%

5.1.21

High level output voltage GLx vs.

SLx1)

GLx5

6.5

––V

VS=7.0V;

Load=20nF;

D.C.=100%

5.1.22

Rise time

rise

–250

–

Load=11nF;

Load=1Ω;

VS=7V;

20-80%

5.1.23

Fall time

fall

–

200

–

Electrical Characteristics MOSFET Drivers

S = 7.0 to 34V, Tj = -40 to +150°C all voltages with respect to ground, positive current flowing into pin

(unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

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