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2SC4226 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC4226 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Elektronische Bauelemente 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor 24-Feb-2011 Rev. B Page 1 of 3 Top View A L C B D G H J F K E 1 2 3 1 2 3 Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● Low noise ● High gain ● Power dissipation.(PC=150mW) APPLICATIONS ● High frequency low noise amplifier. CLASSIFICATION OF hFE PACKAGE INFORMATION Package MPQ LeaderSize SOT-323 3K 7’ inch ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3 V Collector Current – Continuous IC 100 mA Collector Power Dissipation PC 150 mW Junction, Storage Temperature TJ, TSTG +150, -65 ~ +150 ℃ ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Testing Condition Collector-base breakdown voltage V(BR)CBO 20 - - V IC=100μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO 12 - - V IC=1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 3 - - V IE=100μA, IC=0 Collector Cut-off Current ICBO - - 1 A VCB=10V, IE=0 Emitter Cut-off Current IEBO - - 1 A VEB=1V, IC=0 DC Current Gain hFE 40 110 250 VCE=3V, IC=7mA Transition Frequency fT 3.0 4.5 - GHz VCE=3V, IE=7mA Feed Back Capacitance Cre - 0.7 1.5 pF VCE=3V, IE=0, f=1MHz Noise Figure NF - 1.2 2.5 dB VCE=3V, IC=7mA, f=1GHz Product-Rank 2SC4226-P 2SC4226-Q 2SC4226-R Range 40~80 70~140 125~250 Marking r23 r24 r25 SOT-323 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 |
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