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BAV170 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BAV170 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page ![]() Any changing of specification will not be informed individual BAV170 Low-leakage Double Diode Plastic-Encapsulate Diode L A B S G V http://www.SeCoSGmbH.com Elektronische Bauelemente Page 1 of 3 K J C H D Top View 1 2 3 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 FEATURES Low leakage current: typ. 3pA Switching time: typ. 0.8µs Continuous reverse voltage:max.75V Repetitive peak reverse voltage:max.85V Repetitive peak forward current: max. 500mA. MARKING:JX Maximum Ratings @TA=25 ℃ Parameter Symbol Limits Unit Repetitive Peak reverse voltage VRRM 85 V DC Blocking Voltage VR 75 V continuous forward current single diode loaded; note1; double diode loaded; note1; IF 215 125 mA repetitive peak forward current IFRM 500 mA non-repetitive peak forward current square wave; Tj=25C prior to surge; tp=1μs tp=1ms tp=1s IFSM 4 1 0.5 A thermal resistance from junction to tie-point Rth j-tp 360 K/W thermal resistance from junction to ambient note1; Rth j-a 500 K/W Total Power Dissipation Ptot 250 mW Junction temperature TJ 150 ℃ Storage temperature range TSTG -65 to+150 ℃ Note1.Device mounted on a FR4 printed-circuit board. Electrical Characteristics @TA=25 ℃ Parameter Symbol Conditions Min. Typ. Max. Unit VF1 IF=1mA 0.9 V VF2 IF=10mA 1.0 V VF3 IF=50mA 1.1 V Forward voltage VF4 IF=150mA 1.25 V reverse current IR VR=75V 5 nA Reverse recovery time trr IF=IR=10mA,RL=100Ω 3 us Diodes Capacitance Cd VR=0,f=1MHz 2 pF RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 27-Sep-2010 Rev. B |
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