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BAV170 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # BAV170
Description  Low-leakage Double Diode
PDF  3 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BAV170 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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BAV170
Low-leakage Double Diode
Plastic-Encapsulate Diode
L
A
B S
G
V
http://www.SeCoSGmbH.com
Elektronische Bauelemente
Page 1 of 3
K
J
C
H
D
Top View
1
2
3
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
All Dimension in mm
SOT-23
FEATURES
Low leakage current: typ. 3pA
Switching time: typ. 0.8µs
Continuous reverse voltage:max.75V
Repetitive peak reverse voltage:max.85V
Repetitive peak forward current: max. 500mA.
MARKING:JX
Maximum Ratings @TA=25
℃
Parameter
Symbol
Limits
Unit
Repetitive Peak reverse voltage
VRRM
85
V
DC Blocking Voltage
VR
75
V
continuous forward current
single diode loaded; note1;
double diode loaded; note1;
IF
215
125
mA
repetitive peak forward current
IFRM
500
mA
non-repetitive peak forward current
square wave; Tj=25C prior to surge;
tp=1μs
tp=1ms
tp=1s
IFSM
4
1
0.5
A
thermal resistance from junction to tie-point
Rth j-tp
360
K/W
thermal resistance from junction to ambient note1;
Rth j-a
500
K/W
Total Power Dissipation
Ptot
250
mW
Junction temperature
TJ
150
℃
Storage temperature range
TSTG
-65 to+150
℃
Note1.Device mounted on a FR4 printed-circuit board.
Electrical Characteristics @TA=25
℃
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
VF1
IF=1mA
0.9
V
VF2
IF=10mA
1.0
V
VF3
IF=50mA
1.1
V
Forward voltage
VF4
IF=150mA
1.25
V
reverse current
IR
VR=75V
5
nA
Reverse recovery time
trr
IF=IR=10mA,RL=100Ω
3
us
Diodes Capacitance
Cd
VR=0,f=1MHz
2
pF
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
27-Sep-2010 Rev. B


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