Elektronische Bauelemente

BC184

0.1 A, 45 V

NPN Plastic Encapsulated Transistor

5-Mar-2010 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

2

Base

3

Emitter

Collector

1

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

The BC184 is complementary silicon planar epitaxial transistors

for use in AF small signal amplifiers and drivers, as well as for

low noise pre-amplifiers applications. Both types feature good

linearity of DC current gain.

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

45

V

Collector to Emitter Voltage

30

V

Emitter to Base Voltage

6

V

Collector Current - Continuous

0.1

A

Collector Power Dissipation

350

mW

Junction, Storage Temperature

150, -55~150

°C

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITION

Collector to Base Breakdown Voltage

45

-

-

V

µA, I

Collector to Emitter Breakdown Voltage

30

-

-

V

Emitter to Base Breakdown Voltage

6

-

-

V

Collector Cut-Off Current

-

-

15

nA

Collector Cut-Off Current

-

-

0.1

µA

Emitter Cut-Off Current

-

-

15

nA

DC Current Gain

240

-

900

Collector to Emitter Saturation Voltage

-

-

0.6

V

Base to Emitter Voltage

-

-

1.2

V

Collector Output Capacitance

-

-

5

pF

Input Capacitance

-

8

-

pF

Transition Frequency

150

-

-

MHz

Noise Figure

NF

-

-

4

dB

Rank

BC184B

BC184C

Range

240-500

450-900

TO-92

Millimeter

REF.

Min.

Max.

A

4.40

4.70

B

4.30

4.70

C

12.70

-

D

3.30

3.81

E

0.36

0.56

F

0.36

0.51

G

1.27 TYP.

H

1.10

-

J

2.42

2.66

K

0.36

0.76

A

C

E

K

F

D

B

G

H

J