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BC847PN Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # BC847PN
Description  Multi-Chip Transistor
PDF  3 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BC847PN Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  BC847PN Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH BC847PN Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH BC847PN Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
BC847PN
NPN - PNP Silicon
Multi-Chip Transistor
20-Oct-2009 Rev. C
Page 2 of 3
ABSOLUTE MAXIMUM RATINGS OF TR2 at Ta = 25°C
PARAMETER
SYMBOL
VALUE
UNITS
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-45
V
Emitter to Base Voltage
VEBO
-5
V
Collector Currrent – Continuous
IC
-100
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
RθJA
150
℃
Storage Temperature
TSTG
-55 ~ -150
℃
ELECTRICAL CHARACTERISTICS OF TR2 (PNP Transister) at Ta = 25°C
CHARACTERISTIC
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
IC=-10μA, IE=0
V(BR)CBO
-50
V
Collector-Emitter Breakdown Voltage
IC = -10 mA, IB = 0
V(BR)CEO
-45
V
Emitter=Base Breakdown Voltage
IE=-1μA, IC=0
V(BR)EBO
-5
V
Collector Cutoff Current
VCB=-30V, IE=0
ICBO
-15
nA
Emitter Cutoff Current
VEB=-5V, IC=0
IEBO
-15
nA
DC Current Gain
VCE=-5V, IC=-2mA
hFE
220
475
IC=-10mA, IB=-0.5mA
VCE(sat)
-0.3
V
Collector-emitter Saturation Voltage
IC=-100mA, IB=-5mA
VCE(sat)
-0.65
V
IC=-10mA, IB=-0.5mA
VBE(sat)
-0.7
V
Base-Emitter Saturation Voltage
IC=-100mA, IB=-5mA
VBE(sat)
-0.95
V
IC=-2mA, VCE=-5V
VBE(On)
-0.6
-0.75
V
Base-Emitter Voltage
IC=-10mA, VCE=-5V
VBE(On)
-0.82
V
Collector Output Capacitance
VCB=-10V, IE=0, f=1MHz
Cob
4.5
pF
Transition Frequency
VCE=-5V, IC=-10mA, f=100MHz
fT
100
MHz
Noise Figure
VCE=-5V, IC=-0.2mA, f=1kHz
Rg=2KΩ, △f=200Hz
NF
10
dB
CHARACTERISTIC CURVES



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