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BC858A Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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BC858A Datasheet(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
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3 / 3 page ![]() Any changing of specification will not be informed individual BC856A, B BC857A, B, C BC858A, B, C http://www.SeCoSGmbH.com Elektronische Bauelemente BC856 Figure 7. DC Current Gain IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage IC, COLLECTOR CURRENT (mA) −0.8 −1.0 −0.6 −0.2 −0.4 1.0 2.0 −0.1 −1.0 −10 −200 −0.2 0.2 0.5 −0.2 −1.0 −10 −200 TJ = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = −5.0 V Figure 9. Collector Saturation Region IB, BASE CURRENT (mA) Figure 10. Base-Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) −1.0 −1.2 −1.6 −2.0 −0.02 −1.0 −10 0 −20 −0.1 −0.4 −0.8 −0.2 −2.0 −10 −200 −1.0 TJ = 25°C IC = −10 mA VCE = −5.0 V TA = 25°C 0 −0.5 −2.0 −5.0 −20 −50 −100 −0.05 −0.2 −0.5 −2.0 −5.0 −100 mA −20 mA −1.4 −1.8 −2.2 −2.6 −3.0 −0.5 −5.0 −20 −50 −100 −55°C to 125°C θVB for VBE −2.0 −5.0 −20 −50 −100 Figure 11. Capacitance VR, REVERSE VOLTAGE (VOLTS) 40 Figure 12. Current-Gain - Bandwidth Product IC, COLLECTOR CURRENT (mA) −0.1 −0.2 −1.0 −50 2.0 −2.0 −10 −100 100 200 500 50 20 20 10 6.0 4.0 −1.0 −10 −100 VCE = −5.0 V −0.5 −5.0 −20 TJ = 25°C Cob Cib 8.0 −50 mA −200 mA 01-Jun-200 4 Rev.B Page 3 of 3 |
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