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D2007UK Datasheet(PDF) 1 Page - Seme LAB

Part # D2007UK
Description  METAL GATE RF SILICON FET
PDF  2 Pages
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

D2007UK Datasheet(HTML) 1 Page - Seme LAB

  D2007UK Datasheet HTML 1Page - Seme LAB D2007UK Datasheet HTML 2Page - Seme LAB  
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D2007UK
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
PD
Power Dissipation
BVDSS
Drain – Source Breakdown Voltage
BVGSS
Gate – Source Breakdown Voltage
ID(sat)
Drain Current
Tstg
Storage Temperature
Tj
Maximum Operating Junction Temperature
29W
65V
±20V
2A
–65 to 150°C
200°C
MECHANICAL DATA
12
3
4
A
M
F
E
D
C
B
HJ
I
G
K
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 400MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
DA
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
SOURCE
PIN 4
GATE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 500 MHz
METAL GATE RF SILICON FET
TetraFET


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