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2N6798 Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N6798 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 3 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 T4-LDS-0167 Rev. 1 (101021) Page 1 of 3 DEVICES LEVELS 2N6798 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS 200 Vdc Gate – Source Voltage VGS ± 20 Vdc Continuous Drain Current TC = +25°C ID1 5.5 Adc Continuous Drain Current TC = +100°C ID2 3.5 Adc Max. Power Dissipation Ptl 25 (1) W Drain to Source On State Resistance Rds(on) 0.4 (2) Ω Operating & Storage Temperature Top, Tstg -55 to +150 °C Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 3.5A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 200 Vdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 4.0 5.0 Vdc Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 160V, Tj = +125°C IDSS1 IDSS2 25 0.25 µAdc mAdc Static Drain-Source On-State Resistance VGS = 10V, ID = 3.5A pulsed VGS = 10V, ID = 5.5A pulsed Tj = +125°C VGS = 10V, ID = 3.5A pulsed rDS(on)1 rDS(on)2 rDS(on)3 0.4 0.42 0.75 Ω Ω Ω Diode Forward Voltage VGS = 0V, ID = 5.5A pulsed VSD 1.4 Vdc TO-205AF (formerly TO-39) |
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