BCP156 datasheet(1/2 Pages) SECOS

Part #	BCP156

Description	Planar High Performance Transistor

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 2 page

Any changing of specification will not be informed individual

BCP156

NPN Silicon

Planar High Performance Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

SOT-89

Absolute Maximum Ratings at TA=25 C

o

Symbol

Parameter

Value

Collector Current (DC)

5

1.2

55~+150

60

80

3

6

IC

Tstg

TJ,

Junction and

Total Power Dissipation

VEBO

PD

Emitter-Base Voltage

V

A

W

Storage Temperature

-

C

O

VCEO

Collector-Emitter Voltage

V

VCBO

Collector-Base Voltage

V

Units

Collector Current (Pulse)

01-Jun-2002 Rev. A

Page 1 of 2

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

Description

The BCP156 is designed for general purpose

switching and amplifier applications.

Features

* 3 Amp Continuous Current

* 60 Volt VCEO

* Low Saturation Voltage

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

C

*

Pulse width 300 s, Duty Cycle 2%

≦

µ

Parameter

Symbol

Min

Typ.

Max

Uni

Test Conditions

Collector-Base Breakdown Voltage

BVCBO

-

V

IC=100

VEB=4V,IC=0

µA,IE=0

IC=10mA,IB=0

IE=100µA,IC=0

VCB= 60V,IE=0

IC=

VCE= V, IC=

VCE= V, IC=100mA,f=100MHz

VCB=10 , f=1MHz

*BVCEO

60

-

V

BVEBO

-

V

ICBO

-

100

nA

-

*VCE(sat)1

-

*hFE1

fT

-

MH

Cob

-

pF

z

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector Saturation Voltage

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

t

80

5

0.3

100

V

1A,IB=0.1A

2

500mA

5

V

100

200

175

300

-

140

30

IEBO

Emitter-Base Cutoff Current

-

nA

IC=

*VBE(sat)

-

Base-Emitter Saturation Voltage

70

1.25

V

1A,IB=0.1A

*hFE2

-

0.12

0.9

200

VCE= V, IC=

2

50mA

IC=

*VCE(sat)2

-

0.6

V

3A,IB=0.3A

0.43

IC=

*VBE(on)

-

1

V

1A,VCE=2V

0.8

VCE= V, IC=

*hFE3

2

2 A

40

80

-

80

*hFE4

-

170

VCE= V, IC=

2

1A

VCC=

ton

-

ns

toff

-

Time-On

Time-Off

10V,IC=500mA,IB1=IB2=50mA

45

800

-

Measured under pulse condition.

Spice parameter data is available upon request for this device.

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