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BCP772 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCP772 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() PD (TC=25 ) C o 1.2 W Collector to Base Voltage Emitter to Base Voltage Collect Current Total Power Dissipation Operating Junction and Storage Temperature Range A V V V IC C VCBO VCEO Tj, Tstg -40 -30 5. 3 -55~+150 Symbol Ratings Unit o Collector to Emitter Voltage VEBO - - Parameter ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Min Typ. Max Uni Test Conditions Collector-Base Breakdown Voltage BVCBO - - V IC=-100µA IC=-1mA IE=-10µA VCB=-30V IC=- VCE=- V, IC=- VCE=- V, IC=- 20mA,f=100MHz VCB=-10 , f=1MHz BVCEO -30 - - V BVEBO - - V ICBO - - -1 uA -0.3 -2 -0.5 -1 VCE(sat) - hFE1 hFE2 fT - MH Cob - pF z Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance t -40 -5 100 V 2 A,IB=-0.2A 2 20mA VCE=-2 V, IC=-1 A 5 V C 160 30 - 80 55 500 - Base Satruation Voltage VBE(sat) V - - - IC=- 2A,IB=-0.2A o IEBO Emitter-Base Cutoff Current VBE=-3 V - - -1 uA o Absolute Maximum Ratings at TA=25 C (unless otherwise specified) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual RoHS Compliant Product 01-Jun-2002 Rev. A Page 1 of 2 Elektronische Bauelemente BCP772 PNP Epitaxial Planar General Purpose Transistor Description The BCP772 is designed for using in output stage of amplifier, voltage regulator, DC-DC converter and relay driver. Classification of hFE2 Rank Q P E 100~200 250~500 160~320 Range SOT-89 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 q TYP. M 0.70 REF. |
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