BCV27 datasheet(1/3 Pages) SECOS

Part #	BCV27

Description	NPN Darlington Plastic Encapsulated Transistor

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

Logo

1 / 3 page

Elektronische Bauelemente

BCV27

40 V, 500mA

NPN Darlington Plastic Encapsulated Transistor

22-Jan-2010 Rev. A

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

1

Base

2

Emitter

Collector

3

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

For general AF application high collector current

High current gain

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

VCBO

40

V

Collector to Emitter Voltage

VCEO

30

V

Emitter to Base Voltage

VEBO

10

V

Collector Current - Continuous

IC

500

mA

Collector Current - Peak

ICM

800

mA

Collector Power Dissipation

PC

350

mW

Thermal Resistance, Junction to Ambient Air

R

θJA

357

°C/W

Junction, Storage Temperature

TJ, TSTG

150, -65~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITION

Collector to Base Breakdown Voltage

V(BR)CBO

40

-

V

IC=100

µA, I

E = 0A

Collector to Emitter Breakdown Voltage

V(BR)CEO

30

-

V

IC=10mA, IB = 0A

Emitter to Base Breakdown Voltage

V(BR)EBO

10

-

V

IE=10

µA, I

C = 0A

Collector Cut-Off Current

ICBO

-

0.1

µA

VCB=30 V, IE = 0 A

Emitter Cut-Off Current

IEBO

-

0.1

µA

VEB=4 V, IC = 0 A

hFE1*

4000

-

VCE=1V, IC=100

µA

hFE2*

10000

-

VCE=5V, IC=10mA

hFE3*

20000

-

VCE=5V, IC=100mA

DC Current Gain

hFE4*

4000

-

VCE=5V, IC=500mA

Collector to Emitter Saturation Voltage

VCE(sat) *

-

1

V

IC=100mA, IB=0.1mA

Base to Emitter Saturation Voltage

VBE(sat) *

-

1.5

V

IC=100mA, IB=0.1mA

Transition Frequency

fT

-

170

-

MHz

VCE = 5V, IC =50mA, f=100MHz

Collector Output Capacitance

Cob

-

3.5

-

pF

VCB = 10V, f=1MHz

*Pulse test: Pulse width ≦300

µS; Ducy Cycle ≦2.0%

SOT-23

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.04

G

-

0.18

B

2.10

2.80

H

0.40

0.60

C

1.20

1.60

J

0.08

0.20

D

0.89

1.40

K

0.6 REF.

E

1.78

2.04

L

0.85

1.15

F

0.30

0.50

Similar Part No. - BCV27

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BCV27	43Kb / 8P	NPN Darlington transistors 1999 Apr 08
Zetex Semiconductors	BCV27	49Kb / 1P	NPN SILICON PLANAR DARLINGTON TRANSISTORS
Siemens Semiconductor G...	BCV27	140Kb / 4P	NPN Silicon Darlington Transistors (For general AF applications High collector current)
Fairchild Semiconductor	BCV27	52Kb / 5P	NPN Darlington Transistor
Infineon Technologies A...	BCV27	49Kb / 5P	NPN Silicon Darlington Transistors Jul-12-2001

More results

Similar Description - BCV27

Manufacturer	Part #	Datasheet	Description
SeCoS Halbleitertechnol...	2N5172	81Kb / 1P	NPN Plastic Encapsulated Transistor
	2N5832	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2N6517	142Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1008	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1318A	135Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC1923	83Kb / 1P	NPN Plastic Encapsulated Transistor
	D882S	214Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC4548	77Kb / 1P	NPN Plastic Encapsulated Transistor
	2SBA42	74Kb / 1P	NPN Plastic Encapsulated Transistor
	BCV27	461Kb / 3P	NPN Darlington Plastic Encapsulated Transistor

More results

BCV27 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

BCV27 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Similar Part No. - BCV27

Similar Description - BCV27

Html Pages

1 2 3

Datasheet Download

Link URL