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BD438 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BD438 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() -Jun-2002 Rev. A Page 1 of 2 01 Elektronische Bauelemente BD438/BD440/BD442 PNP Type TO-126 8.0±0.2 1: Emitter 2: Collector 3: Base 4.14±0.1 11.0±0.2 1.4±0.1 15.3±0.2 1.27±0.1 2.28 Typ. 4.55±0.1 0.5±0.1 2.0±0.2 3.2±0.2 1 2 3 0.76±0.1 Dimensions in Millimeters O2.8±0.1 O 3.2±0.1 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Features * Amplifier and switching applications Plastic Encapsulate Transistors MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol meter Para Value Units o VCBO Collector-Base Voltage BD438 BD440 BD442 -45 -60 -80 V VCEO Collector-Emitter Voltage BD438 BD440 BD442 -45 -60 -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -4 A PC Collector Dissipation 1.25 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 BD438 BD440 BD442 -45 -60 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-100mA, IB=0 BD438 BD440 BD442 -45 -60 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-45V, IE=0 BD438 VCB=-60V, IE=0 BD440 VCB=-80V, IE=0 BD442 -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -1 µA hFE(1) VCE=-5V, IC=-10mA BD438 BD440 BD442 30 20 15 hFE(2) VCE=-1V, IC=-500mA BD438 BD440/BD442 85 40 375 475 DC current gain hFE(3) VCE=-1V, IC=-2A BD438 BD440 BD442 40 25 15 Collector-emitter saturation voltage VCE(sat) IC=-3A, IB=-300mA BD438 BD440/BD442 -0.7 -0.8 V Base-emitter voltage VBE VCE=-1V, IC=-2A BD438 BD440/BD442 -1.1 -1.5 V Transition frequency fT VCE=-1V, IC=-250mA, f=1MHz 3 MHz RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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