BD439 datasheet(1/2 Pages) SECOS

Part #	BD439

Description	Plastic Encapsulate Transistors

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 2 page

-Jun-2002 Rev. A

Page 1 of

2

01

Elektronische Bauelemente

BD439/BD441

NPN Type

Plastic Encapsulate Transistors

TO-126

8.0±0.2

1: Emitter

2: Collector

3: Base

4.14±0.1

11.0±0.2

1.4±0.1

15.3±0.2

1.27±0.1

2.28 Typ.

4.55±0.1

0.5±0.1

2.0±0.2

3.2±0.2

1

2

3

0.76±0.1

Dimensions in Millimeters

O2.8±0.1

O

3.2±0.1

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Features

* Amplifier and switching applications

MAXIMUM RATINGS* TA=25

unless otherwise noted

Symbol

mete

Value

Units

VCBO

Collector-Base Voltage

BD439

BD441

60

80

V

VCEO

Collector-Emitter Voltage

BD439

BD441

60

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current –Continuous

4

A

PC

Collector Dissipation

1.25

W

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55-150

Para

C

o

C

o

C

o

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

100μA,IE=0

BD439

BD441

60

80

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

100mA,IB=0

BD439

BD441

60

80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=

100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=60V,IE=0

BD439

VCB=80V,IE=0

BD441

100

μ

A

Emitter cut-off current

IEBO

VEB=

5V,IE=0

1

mA

hFE(1)

VCE=

1V,IC=500mA

40

475

hFE(2)

VCE=

5V,IC=10mA

BD439

BD441

20

15

DC current gain

hFE(3)

VCE=

1V,IC=2A

BD439

BD441

25

15

Collector-emitter saturation voltage

VCE(sat)

IC=3A,IB=0.3A

0.8

V

Base-emitter voltage

VBE

VCE=

1V,IC=2A

1.1

V

Transition frequency

fT

VCE=

1V,IC=250mA

3

MHz

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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