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C945T Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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C945T Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual C945 T NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente FEATURES Low noise Excellent h Complementary to A73 3T Noise Figure NF VCE=6V, IC=0.1mA, RG=10 KΩ, f=kMHz 10 dB FE linearity MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Value Units 1 2 TO-92 1. EMITTER 2. BASS COLLECTOR 3. 1 2 3 3 01-Jun-2005 Rev. B Page 1 of 2 Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current Continuous IC 150 mA Collector Power Dissipation PC 400 mW Junction, Storage Temperature TJ, TSTG 125, -55~125 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100μA, IB = 0 50 V Emitter-Base Breakdown Voltage V(BR)EBO IE = 100mA, IC = 0 5 V Collector Cut-off Current ICBO VCB = 60V, IE = 0 0.1 μA Collector Cut-off Current ICEO VCE = 45V 0.1 μA Emitter Cut-off Current IEBO VEB = 5V, IC = 0 0.1 μA hFE(1) VCE = 6V, IC = 1mA 70 700 DC Current Gain hFE(2) VCE = 6V, IC = 0.1mA 40 Collector-Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 10mA 0.3 V Base-Emitter Saturation Voltage VBE(sat) IC = 100mA, IB = 10mA 1 V Collector Power Dissipation Cob VCB = 10V, IE = 0, f = 1MHz 3.0 pF Transition Frequency fT VCE=6V, IC=10mA, f=30MHz 200 MHz CLASSIFICATION OF hFE Rank O Y GR BL Range 70-140 120-240 200-400 350-700 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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