CZD2983

NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente

03-Sep-2010 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ. Max. Unit

Test Conditions

Collector-base breakdown voltage

160

-

-

V

Collector-emitter breakdown voltage

160

-

-

V

Emitter-base breakdown voltage

5

-

-

V

Collector cut-off current

-

-

1

A

Emitter cut-off current

-

-

1

A

Collector-emitter saturation voltage

-

-

1.5

V

Base-emitter saturation voltage

-

-

1.0

V

*DC current gain

70

-

240

Transition frequency

-

100

-

MHz

Output Capacitance

-

25

-

pF

*Measured under pulse condition. Pulse width ≦ 300μs, Duty Cycle ≦ 2%

CLASSIFICATION OF hFE

Rank

O

Y

Range

70 ~ 140

120 ~ 240