-Jun-2002 Rev. A

Page 1 of

2

01

Elektronische Bauelemente

D882

NPN Type

TO-126

1: Emitter

2: Collector

3: Base

2.28 Typ.

1

2

3

Dimensions in Millimeters

O

Features

Plastic Encapsulate Transistors

Symbol

meter

Para

Value

Units

Collector-Base Voltage

40

30

6

3

V

Collector-Emitter Voltage

V

Emitter-Base Voltage

V

Collector Current –Continuous

A

Collector Dissipation

1.25

W

Junction and

Storage Temperature

-55-150

C

o

Total Device Dissipation

1.25

W

C

o

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

ELECTRICAL

CHARACTERISTICS(Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

40

V

Collector-emitter breakdown voltage

30

V

Emitter-base breakdown voltage

6

V

Collector cut-off current

1

uA

Collector cut-off current

10

uA

Emitter cut-off current

1

uA

60

400

DC current gain

32

Collector-emitter saturation voltage

0.5

V

Base-emitter saturation voltage

1.5

V

Transition frequency

f = 10MHz

50

MHz

Rank

R

O

Y

GR

Range

60-120

100-200

160-320

200-400

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free