APT77N60BC6

APT77N60SC6

600V

77A 0.041

Ω

• Ultra Low R

DS(ON)

• Low Miller Capacitance

• Avalanche Energy Rated

• Extreme dv/dt Rated

• Popular TO-247 or Surface Mount D

Super Junction MOSFET

C

Power Semiconductors

O

G

D

S

TO-247

MAXIMUM RATINGS

All Ratings per die: T

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

STATIC ELECTRICAL CHARACTERISTICS

"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-

mark of Infineon Technologies AG."

Microsemi Website - http://www.microsemi.com

Symbol

Parameter

APT77N60B_SC6

UNIT

V

DSS

Drain-Source Voltage

600

Volts

I

D

Continuous Drain Current @ T

77

Amps

Continuous Drain Current @ T

49

I

DM

272

V

GS

Gate-Source Voltage Continuous

±

20

Volts

P

D

Total Power Dissipation @ T

481

Watts

T

Operating and Storage Junction Temperature Range

- 55 to 150

°C

T

L

Lead Temperature: 0.063" from Case for 10 Sec.

300

I

AR

13.4

Amps

E

AR

2.96

mJ

E

AS

Single Pulse Avalanche Energy

( Id = 13.4A, Vdd = 50V )

1954

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV

(DSS)

Drain-Source Breakdown Voltage (V

600

Volts

R

DS(on)

.037

.041

Ohms

I

DSS

Zero Gate Voltage Drain Current (V

25

μA

Zero Gate Voltage Drain Current (V

250

I

GSS

Gate-Source Leakage Current (V

±100

nA

V

GS(th)

Gate Threshold Voltage (V

2.5

3

3.6

Volts