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DTA114EE Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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DTA114EE Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() DTA114EE / DTA114EUA / DTA114ECA / DTA114ESA PNP Digital Transistors (Built-in Resistors) Elektronische Bauelemente 11-Aug-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely Eliminating parasitic effects. Only the on/off conditions need to be set for operation, making device design easy. EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS at (TA = 25°C unless otherwise noted) Parameter Symbol Limits (DTA114E□) Unit E UA CA SA Collector-Base Voltage VCC -50 V Collector-Emitter Voltage VIN -40 ~ 10 V Emitter-Base Voltage IO -50 mA Collector Current-Continuous IC(MAX) -100 Collector Dissipation PD 150 200 300 mW Junction & Storage temperature TJ, TSTG 150, -55~150 ℃ ELECTRICAL CHARACTERISTICS at (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Input Voltage VI(off) - - -0.5 V VCC= -5V, IO= -100A VI(on) -3 - - VO= -0.3V, IO= -10mA Output Voltage VO(on) - - -0.3 V IO/II= -10mA / -0.5mA Input Current II - - -0.88 mA VI= -5V Output Current IO(off) - - -0.5 A VCC= -50V, VI=0 DC Current Gain GI 30 - - VO= -5V, IO= -5mA Input Resistance R1 7 10 13 KΩ Resistance ratio R2 / R1 0.8 1 1.2 Transition frequency fT - 250 - MHz VCE= -10V, IE= -5mA, f= 100MHz DTA114EE (SOT-523) Addreviated symbol:14 DTA114EUA (SOT-323) Addreviated symbol:14 DTA114ESA (TO-92S) DTA114ECA (SOT-23) Addreviated symbol:14 |
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