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M8550T Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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M8550T Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  M8550T -0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 29-Apr-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Power Dissipation ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -6 V Collector Current - Continuous IC -800 mA Collector Power Dissipation PC 625 mW Junction, Storage Temperature TJ, TSTG 125, -55~125 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -40 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -25 - - V IC=0.1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -6 - - V IE=100µA, IC=0 Collector Cut-Off Current ICBO - - -0.1 µ A VCB=-35V, IE=0 Collector Cut-Off Current ICEO - - -0.1 µ A VCE=-20V, IB=0 DC Current Gain hFE(1) 45 - - VCE=-1V, IC=-5mA hFE(2) 80 - 400 VCE=-1V, IC=-100mA hFE(3) 40 - - VCE=-1V, IC=-800mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.5 V IC=-800mA, IB=-80mA Base to Emitter Saturation Voltage VBE(sat) - - -1.2 V IC=-800mA, IB=-80mA Transition Frequency fT 80 - - MHz VCE=-6V, IC=-20mA, f=30MHz *Pulse Test：pulse width 300 µ ≦ s, duty cycle ≦ 2%. TO-92 1 1 1 1Emitter 2 2 2 2Base 3 3 3 3Collector A C E F D G H J B |
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