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MMBT591 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT591 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual MMBT591 PNP Silicon General Purpose Transistor Power dissipation PCM : 0.5 W Collector Current ICM : -1 A Collector-base voltage FEATURES Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S G V 3 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente 1 2 V(BR)CBO : -80 V Operating & storage junction temperature Tj, Tstg : - 55 O C ~ + 150 O C 3 ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=- 100μA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO 1 Ic=- 10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA hFE(1) VCE=-5V,IC=-1mA 100 hFE(2) 1 VCE=-5V,IC=-500mA 100 300 hFE(3) 1 VCE=-5V,IC=-1A 80 DC current gain hFE(4) 1 VCE=-5V,IC=-2A 15 VCE(sat)1 1 IC=-500mA,IB=-50mA -0.3 V Collector-emitter saturation voltage VCE(sat)2 1 IC=-1A,IB=-100mA -0.6 V Base-emitter saturation voltage VBE(sat) 1 IC=-1A,IB=-100mA -1.2 V Base-emitter voltage VBE 1 VCE=-5V,IC=-1A -1 V Transition frequency fT VCE=-10V,IC=-50mA,,f=100MHz 150 MHz Collector output capacitance Cob VCB=-10V,f=1MHz 10 pF 1Measured under pulsed conditions,Pulse width=300μs, Duty cycle≤2%. Marking: 591 COLLECTOR 3 1 BASE 2 EMITTER RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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